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KMID : 1059519920360040511
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Journal of the Korean Chemical Society
1992 Volume.36 No. 4 p.511 ~ p.516
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Nonstoichiometry of the Ytterbium Oxide
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Yo Chul-Hyun
Kim Hyung-Rak
Rho Kwon-Sun
Kim Keu-Hong
Oh Eung-Ju
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Abstract
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The x-values of the nonstoichiometric compound YbOx have been measured in a temperature range of 600 to 1150℃ under oxygen partial pressure of 1.00 × 10-2 atm∼atmospheric air pressure. The values are varied between 1.55453 and 1.60794 in the conditions. The enthalpy of the formation for x' in YbO1.5＋x'(△Hf) was 1.55, 1.18, and 1.05 kJ/mol under the above conditions, respectively. The electrical conductivities of the oxides or σ have been measured in the temperature range from 600 to 1100℃ under oxygen partial pressure of 1.00 × 10-5 ∼ 2.00 × 10-1 atm. They varied from 10-9 to 10-5 ohm-1 cm-1 within the semiconductor range. The Arrhenius plots of the electrical conductivities show a linearity and the activation energy for the conduction was about 1.7eV. The oxygen partial pressure dependence of the conductivity or 1/n value increases with the pressure. The nonstoichiometric conduction mechanism of the oxide was discussed in terms of the x values, σ values, and the thermodynamic data.
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